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         Ge Substrates  

growing stations Sylarus germanium substrates are fabricated from zero-defect, single-crystal ingots grown in new, state-of-the-art growth stations. The Sylarus technical team is arguably North America's premier crystal growth group, with over 100 years of combined experience in semiconductor crystal growth and wafer fabrication.

                                   Ge Wafer Specification

Crystal Pulling Method Czochralski
Dislocation Density Zero Dislocation
Doping Undoped and P-Type
Resistivity Per Customer Request
Orientation Per Customer Specification, nominally <100>
Orientation Tolerance +/- 0.5 degree or Per Customer Specification
Bow and Warp <75 µm or Per Customer Specification
TTV <10µm or Per Customer Specification
Frontside and Backside Finish Per Customer Specification
Diameter 100 mm, 150 mm others available Per Customer Specification
Thickness 100µm or Per Customer Specification

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