Ge Substrates
![]() |
Sylarus germanium substrates are fabricated from zero-defect, single-crystal ingots grown in new, state-of-the-art growth stations. The Sylarus technical team is arguably North America's premier crystal growth group, with over 100 years of combined experience in semiconductor crystal growth and wafer fabrication. |
Ge Wafer Specification
| Crystal Pulling Method | Czochralski |
| Dislocation Density | Zero Dislocation |
| Doping | Undoped and P-Type |
| Resistivity | Per Customer Request |
| Orientation | Per Customer Specification, nominally <100> |
| Orientation Tolerance | +/- 0.5 degree or Per Customer Specification |
| Bow and Warp | <75 µm or Per Customer Specification |
| TTV | <10µm or Per Customer Specification |
| Frontside and Backside Finish | Per Customer Specification |
| Diameter | 100 mm, 150 mm others available Per Customer Specification |
| Thickness | 100µm or Per Customer Specification |